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电场干扰对光学电压互感器性能的影响

归档日期:07-08       文本归类:光学干扰      文章编辑:爱尚语录

  电场干扰对光学电压互感器性能的影响_电子/电路_工程科技_专业资料。为了研究电场干扰对纵向调制结构光学电压互感器的影响,采用张量分析方法,从电光晶体相对逆介电张量入手,进行了仿真分析和实验验证,并根据光线分离实验结果,设计了光学电场传感器,传感器的幅值误差在±2%以内。结果表明,外界干扰电场会导致电光晶体内两传输简正模发生光线分离,使

  第 39 卷第 6 期 2015 年 11 月 激光技术 LASER TECHNOLOGY November ,2015 Vol . 39,No. 6 文章编号: 1001- 3806(2015)06- 0769- 07 电场干扰对光学电压互感器性能的影响 赵一男,郭志忠 倡 ( 哈尔滨工业大学 电气工程及自动化学院, 哈尔滨 150001) 摘要: 为了研究电场干扰对纵向调制结构光学电压互感器的影响,采用张量分析方法,从电光晶体相对逆介电张量 入手,进行了仿真分析和实验验证,并根据光线分离实验结果,设计了光学电场传感器,传感器的幅值误差在 ± 2%以内。 结果表明,外界干扰电场会导致电光晶体内两传输简正模发生光线分离, 使得两束偏振光在检偏器处不能进行有效干 涉,进而使得有效输出信号变小;当干扰电压为 500 V、光斑半径达到 0. 2 mm 时,磷酸二氢钾晶体干涉效率引起的误差可 5 以达到 0. 3%;而当干扰电场强度小于 10 V / m 时,锗酸铋晶体的干涉效率接近于 1;干扰电场引起的互感器误差不仅与 干扰电场大小有关,还与入射光束半径及传感晶体长度有关;选择具有较大光束半径的光源及减小传感晶体长度可以有 效地降低干扰电场的影响。 该研究成果将为光学电压互感器的设计提供一定的指导。 关键词: 光学器件;离散角;干涉;光强;干涉效率;光学电压互感器 中图分类号: TM451文献标志码: Adoi :10畅 7510 / jgjs畅 issn畅 1001- 3806畅 2015畅 06畅 008 Effect of electric field interference on performance of optical voltage transducers ( School of Electrical Engineering and Automation , Harbin Institute of Technology , Harbin 150001, China ) ZHAO Yinan, GUO Zhizhong Abstract: In order to investigate effect of electric field interference on the properties of an optical voltage transducer with longitudinal modulation structure , using tensor analysis method and based on the relative inverse dielectric tensor of the electro - optic crystal , simulation analysis and experimental verification were carried out .According to experimental result of light separation , an optical electric field sensor was designed .The magnitude error of sensor was within ± 2%.The results show that light separation will occur in two transmitting normal modes of electro - optical crystal while electric field interference exists , which makes that the two polarized beams can not interfere effectively in the analyzer and which leads to a smaller output signal .The error caused by interference efficiency of KDP crystal can reached 0. 3% when interference voltage was 500V and spot radius was 5 0. 2 mm. When interference field intensity is less than 10 V / m, interference efficiency of Bi 4 Ge3 O12 ( BGO) crystal is close to 1. The transducer error caused by electric field interference has the relationship not only with the magnitude of electric interference but also with the beam radius and the length of sensing crystal .The influence of interference electric field can be reduced effectively by selecting the light source with larger beam radius and the sensing crystal with smaller length .The research can provide the guidance for the design of optical voltage transducers . Key words: optical devices ; discrete angle ; interference ; light intensity ; efficiency o

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